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| BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications 1 TO-220F 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 1.Base Value 850 1000 400 450 9 5 10 2 4 40 150 - 65 ~ 150 Units V V V V V A A A A W C C VEBO IC ICP IB IBP PC TJ TSTG Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF Collector Cut-off Current : BUT11F : BUT11AF IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11F : BUT11AF Base-Emitter Saturation Voltage : BUT11F : BUT11AF Turn On Time Storage Time Fall Time VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 mA mA mA V V V V s s s Test Condition IC = 100mA, IB = 0 Min. 400 450 Typ. Max. Units V V ICES VBE(sat) tON tSTG tF * Pulsed: pulsed duration = 300s, duty cycle = 1.5% Thermal Characteristics TC=25C unless otherwise noted Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 3.125 Units C/W Rev. A2, August 2001 (c)2001 Fairchild Semiconductor Corporation BUT11F/11AF Typical Characteristics 1000 10 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 5V IC = 5 IB hFE, DC CURRENT GAIN 1 10 0.1 VCE(sat) 1 0.01 0.01 0.01 0.1 1 10 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 10 IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) IC[A], COLLECTOR CURRENT 8 6 4 0.1 2 0.01 0.01 0.1 1 10 0 0 200 400 600 BUT11F 800 BUT11AF 1000 1200 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe Operating Area 10 80 Ic MAX (Continuous) 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION DC 60 1 50 40 30 0.1 20 BUT11AF BUT11F 0.01 1 10 100 1000 10 0 0 25 50 O 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Figure 6. Power Derating Rev. A2, August 2001 BUT11F/11AF Package Demensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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